1SS321,LF

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 50MA S-MINI

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 50MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	1SS321,LF

Capacitance @ Vr, F	3.2 pF
Current - Average Rectified (Io)	50 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Speed	Any Speed
Speed	200 mA
Supplier Device Package	S-Mini
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE SCHOTTKY 10V 50MA S-MINI

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction	Mounting Type	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology
Toshiba Semiconductor and Storage 1SS321,LF	1 V	50 mA	3.2 pF	10 V	SC-59, SOT-23-3, TO-236-3	125 °C	Surface Mount	Any Speed	200 mA	S-Mini	500 nA	Schottky

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General part information

Diode 10 V 50mA Surface Mount S-Mini

Technical documentation and resources