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KSH50TF

KSH50TF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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KSH50TF

KSH50TF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Find alt

Description

General part information

KSH50 Series

NPN Epitaxial Silicon Transistor

Technical Specifications

Parameters and characteristics for this part

SpecificationKSH50TF
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)200 µA
DC Current Gain (hFE) (Min)30
Frequency - Transition10 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max1.56 W
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources