C3M0120090D

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SICFET N-CH 900V 23A TO247-3

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SICFET N-CH 900V 23A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	C3M0120090D

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.3 nC
Input Capacitance (Ciss) (Max) @ Vds	414 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	97 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	18 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	3.5 V

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General part information

N-Channel 900 V 23A (Tc) 97W (Tc) Through Hole TO-247-3

Technical documentation and resources