DMP1007UCB9-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
DMP1007UCB9-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMP1007UCB9-7
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1007UCB9-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13.2 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 8.2 nC |
| Input Capacitance (Ciss) (Max) | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | WLBGA, 9-UFBGA |
| Package Name | U-WLB1515-9 (Type C) |
| Power Dissipation (Max) | 840 mW |
| Rds On (Max) | 5.7 mOhm, 5.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 6 V |
| Vgs(th) (Max) | 1.1 V |
Pricing
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CAD
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Documents
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