STP34NM60ND
LTBSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.097 OHM, 10 V, 4 V ROHS COMPLIANT: YES
STP34NM60ND
LTBSTMicroelectronics
MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.097 OHM, 10 V, 4 V ROHS COMPLIANT: YES
Description
General part information
STP34NM60ND
The worldwide best RDS (ON) area amongst the fast recovery diode device
Low gate input resistance
Extremely high dV/dt and avalanche capabilities
Technical Specifications
Parameters and characteristics for this part
| Specification | STP34NM60ND |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 29 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80.4 nC |
| Input Capacitance (Ciss) (Max) | 2785 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) | 110 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources