DMG8N65SCT

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Obsolete

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMG8N65SCT

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1217 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

N-CHANNEL ENHANCEMENT MODE MOSFET

Part	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Technology	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade
Diodes Inc DMG8N65SCT	N-Channel	TO-220-3	8 A	TO-220AB	1.3 Ohm	Through Hole	650 V	4 V	30 nC	10 V	AEC-Q101	MOSFET (Metal Oxide)	30 V	125 W	1217 pF	-55 °C	150 °C	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Technical documentation and resources