1N4003B-G

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Comchip Technology

DIODE GEN PURP 200V 1A DO41

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Comchip Technology

DIODE GEN PURP 200V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4003B-G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 0.04

DIODE GEN PURP 200V 1A DO41

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Speed	Speed	Package / Case
Comchip Technology 1N4003B-G	DO-41	1.1 V	200 V	15 pF	Standard	5 µA	150 °C	-55 °C	Through Hole	1 A	Standard Recovery >500ns	200 mA	Axial, DO-204AL, DO-41

General part information

Diode 200 V 1A Through Hole DO-41

Technical documentation and resources

No documents available