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DMTH8003STLWQ-13

DMTH8003STLWQ-13

Active
Diodes Inc

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH8003STLWQ-13

DMTH8003STLWQ-13

Active
Diodes Inc

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMTH8003STLWQ Series

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, power managements.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH8003STLWQ-13
Current - Continuous Drain (Id) (Tc)173 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)124 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)8191 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NamePOWERDI1012-8
Power Dissipation (Max)5.6 W, 150 W
QualificationAEC-Q101
Rds On (Max)2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

Technical documentation and resources