UF3C065030K3S

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Qorvo

SICFET N-CH 650V 85A TO247-3

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Qorvo

SICFET N-CH 650V 85A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	UF3C065030K3S

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	441 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-247-3
Technology	SiCFET (Cascode SiCJFET)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id [Max]	6 V

SICFET N-CH 650V 85A TO247-3

Part	Power Dissipation (Max)	FET Type	Package / Case	Vgs(th) (Max) @ Id [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package
Qorvo UF3C065030K3S	441 W	N-Channel	TO-247-3	6 V	Through Hole	51 nC	85 A	1500 pF	650 V	35 mOhm	12 V, 12 V	SiCFET (Cascode SiCJFET)	-55 °C	175 ░C	25 V	TO-247-3

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General part information

N-Channel 650 V 85A (Tc) 441W (Tc) Through Hole TO-247-3

Technical documentation and resources

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