NST65010MW6T1G
ActiveBIPOLAR TRANSISTOR ARRAY, DUAL PNP, 65 V, 100 MA
NST65010MW6T1G
ActiveBIPOLAR TRANSISTOR ARRAY, DUAL PNP, 65 V, 100 MA
Description
General part information
NST65010MW6T1G
This transistor is housed in an ultra-small SOT-363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Complementary NPN equivalent NST65011MW6T1G is available.Current Gain Matching to 10% Base-Emitter Voltage Matched to = 2 mV Drop-In Replacement for Standard Device NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Technical Specifications
Parameters and characteristics for this part
| Specification | NST65010MW6T1G |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 15 nA |
| DC Current Gain (hFE) (Min) | 220 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88/SC70-6/SOT-363 |
| PNP Count | 2 |
| Power - Max | 380 mW |
| Transistor Configuration | Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
Pricing
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