MTW32N20EG
ObsoletePOWER MOSFET 200V 32A 75 MOHM SINGLE N-CHANNEL TO-247
MTW32N20EG
ObsoletePOWER MOSFET 200V 32A 75 MOHM SINGLE N-CHANNEL TO-247
Description
General part information
MTW32N20EG
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Technical Specifications
Parameters and characteristics for this part
| Specification | MTW32N20EG |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 32 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 120 nC |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 180 W |
| Rds On (Max) | 75 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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