1SS319(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 40V 100MA SC61B

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Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 40V 100MA SC61B

Technical Specifications

Parameters and characteristics for this part

Specification	1SS319(TE85L,F)

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	5 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-61AA
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-61B
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V

DIODE ARR SCHOTT 40V 100MA SC61B

Part	Package / Case	Current - Average Rectified (Io) (per Diode)	Speed	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction	Supplier Device Package	Diode Configuration	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS319(TE85L,F)	SC-61AA	100 mA	Any Speed	200 mA	Schottky	40 V	Surface Mount	125 °C	SC-61B	2 Independent	5 µA

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General part information

Diode Array 2 Independent 40 V 100mA Surface Mount SC-61AA

Technical documentation and resources