SUP90330E-GE3

Active

Vishay Siliconix

MOSFET N-CH 200V 35.8A TO220AB

Search across all available documentation for this part.

Active

Vishay Siliconix

MOSFET N-CH 200V 35.8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP90330E-GE3

Current - Continuous Drain (Id) @ 25°C	35.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1172 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	37.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 200V 35.8A TO220AB

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay Siliconix SUP90330E-GE3	20 V	-55 °C	175 ░C	4 V	35.8 A	TO-220AB	37.5 mOhm	32 nC	TO-220-3	Through Hole	1172 pF	MOSFET (Metal Oxide)	N-Channel	125 W	200 V	10 V	7.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 35.8A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources