NTMFS5C430NLT1G
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 40 V, 200 A, 0.0012 OHM, DFN, SURFACE MOUNT
NTMFS5C430NLT1G
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 40 V, 200 A, 0.0012 OHM, DFN, SURFACE MOUNT
Description
General part information
NTMFS5C430NLT1G
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMFS5C430NLT1G |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 200 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 70 nC |
| Input Capacitance (Ciss) (Max) | 4300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 5 Leads |
| Package Length | 5 mm |
| Package Name | 8-PowerTDFN, 8-SOFL, 5-DFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 3.8 W, 110 W |
| Rds On (Max) | 1.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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