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71V67603S133BQG

71V67603S133BQG

Obsolete
Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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71V67603S133BQG

71V67603S133BQG

Obsolete
Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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Description

General part information

71V67603 Series

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.

Technical Specifications

Parameters and characteristics for this part

Specification71V67603S133BQG
Access Time4.2 ns
Clock Frequency133 MHz
Memory Depth256 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size9 Mbit
Memory TypeVolatile
Memory Width36 bit
Mounting TypeSurface Mount
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package / Case165-TBGA
Package Length13 mm
Package Name165-CABGA
Package Width15 mm
TechnologySRAM - Synchronous, SDR
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

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