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FDC642P-F085

FDC642P-F085

Obsolete
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -20V, -4A, 100MΩ

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FDC642P-F085

FDC642P-F085

Obsolete
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -20V, -4A, 100MΩ

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Description

General part information

FDC642P-F085

P-Channel PowerTrench®MOSFET, -20V, -4A, 100mΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC642P-F085
Current - Continuous Drain (Id) (Ta)4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)16 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)640 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package NameSuperSOT™-6
Power Dissipation (Max)1.2 W
QualificationAEC-Q101
Rds On (Max)65 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

3D models and CAD resources for this part