
FDC642P-F085
ObsoleteON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -20V, -4A, 100MΩ

FDC642P-F085
ObsoleteON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, -20V, -4A, 100MΩ
Description
General part information
FDC642P-F085
P-Channel PowerTrench®MOSFET, -20V, -4A, 100mΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC642P-F085 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 16 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 640 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power Dissipation (Max) | 1.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 65 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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