FDPF2D3N10C
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100V, 222A, 2.3MΩ
FDPF2D3N10C
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100V, 222A, 2.3MΩ
Description
General part information
FDPF2D3N10C
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDPF2D3N10C |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 222 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 152 nC |
| Input Capacitance (Ciss) (Max) | 11180 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220F |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) | 2.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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