Specification	PJW1NA60B_R2_00001

Current - Continuous Drain (Id) (Ta)	400 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6.1 nC
Input Capacitance (Ciss) (Max)	210 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SOT-223
Power Dissipation (Max)	3.3 W
Rds On (Max)	10 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	3.5 V

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