US6M2GTR
ActiveRohm Semiconductor
MOSFET N/P-CH 30V/20V 1.5A TUMT6
US6M2GTR
ActiveRohm Semiconductor
MOSFET N/P-CH 30V/20V 1.5A TUMT6
Description
General part information
US6M2GTR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
Technical Specifications
Parameters and characteristics for this part
| Specification | US6M2GTR |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Typical) | 1.5 A |
| Drain to Source Voltage (Vdss) (Option 1) | 30 V |
| Drain to Source Voltage (Vdss) (Option 2) | 20 V |
| Gate Charge (Max) | 2.2 nC |
| Input Capacitance (Ciss) (Max) | 150 pF, 80 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | Flat Leads, 6-SMD |
| Package Name | TUMT6 |
| Power - Max | 1 VA |
| Rds On (Max) | 390 mOhm, 240 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V, 2 V |
Pricing
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