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G2K3N10G

G2K3N10G

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Goford Semiconductor

N100V, 2.5A,RD<220M@10V,VTH1V~2V

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G2K3N10G

G2K3N10G

Active
Goford Semiconductor

N100V, 2.5A,RD<220M@10V,VTH1V~2V

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Description

General part information

G2K3N10G

N100V, 2.5A,RD<220M@10V,VTH1V~2V

Technical Specifications

Parameters and characteristics for this part

SpecificationG2K3N10G
Current - Continuous Drain (Id) (Tc)2.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)13 nC
Input Capacitance (Ciss) (Max)436 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-243AA
Package NameSOT-89
Power Dissipation (Max)1.5 W
Rds On (Max)220 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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    G2K3N10G | Goford Semiconductor | Zenode.ai