HGTG12N60A4D
ObsoleteIGBT 600V 54A 167W TO247
HGTG12N60A4D
ObsoleteIGBT 600V 54A 167W TO247
Description
General part information
HGTG12N60A4D Series
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTG12N60A4D |
|---|---|
| Current - Collector (Ic) (Max) | 54 A |
| Current - Collector Pulsed (Icm) | 96 A |
| Gate Charge | 78 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 167 W |
| Reverse Recovery Time (trr) | 30 ns |
| Switching Energy (Off) | 50 µJ |
| Switching Energy (On) | 55 µJ |
| Td (off) @ 25°C | 96 ns |
| Td (on) @ 25°C | 17 ns |
| Test Condition Current | 12 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 390 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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CAD
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Documents
Technical documentation and resources