HUF75639G3
ActiveMOSFET TRANSISTOR, N CHANNEL, 56 A, 100 V, 25 MOHM, 10 V, 4 V ROHS COMPLIANT: YES
HUF75639G3
ActiveMOSFET TRANSISTOR, N CHANNEL, 56 A, 100 V, 25 MOHM, 10 V, 4 V ROHS COMPLIANT: YES
Description
General part information
HUF75639G3
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Technical Specifications
Parameters and characteristics for this part
| Specification | HUF75639G3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 56 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 130 nC |
| Input Capacitance (Ciss) (Max) | 2000 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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