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MSC080SMA330B4N

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Microchip Technology

MOSFET SIC 3300V 80 MOHM TO-247-

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MSC080SMA330B4N

Active
Microchip Technology

MOSFET SIC 3300V 80 MOHM TO-247-

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Description

General part information

MSC080SMA330B4N

MOSFET SIC 3300V 80 MOHM TO-247-

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC080SMA330B4N
Current - Continuous Drain (Id) (Tc)41 A
Drain to Source Voltage (Vdss)3300 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)55 nC
Input Capacitance (Ciss) (Max)3462 pF, 3462 pF, 3462 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)381 W
Rds On (Max)105 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive23 V
Vgs(th) (Max)2.97 V

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