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Description

General part information

AOW298

MOSFET N-CH 100V 9A/58A TO262

Technical Specifications

Parameters and characteristics for this part

SpecificationAOW298
Current - Continuous Drain (Id) (Ta)9 A
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)27 nC
Input Capacitance (Ciss) (Max)1670 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262
Power Dissipation (Max)2.1 W, 100 W
Rds On (Max)14.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.1 V

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