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Description

General part information

AOK033V120X2Q

1200V SILICON CARBIDE MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationAOK033V120X2Q
Current - Continuous Drain (Id) (Tc)68 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)104 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2908 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)300 W
QualificationAEC-Q101
Rds On (Max)43 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive15 V
Vgs(th) (Max)2.8 V

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