Description
General part information
IGLD65R110D2AUMA1
The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGLD65R110D2AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 14 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.4 nC |
| Input Capacitance (Ciss) (Max) | 170 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LDFN Exposed Pad |
| Package Name | PG-LSON-8-2 |
| Power Dissipation (Max) | 51 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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