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FCH76N60N

FCH76N60N

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600V, 76A, 36MΩ, TO-247

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FCH76N60N

FCH76N60N

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600V, 76A, 36MΩ, TO-247

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Description

General part information

FCH76N60N

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH76N60N
Current - Continuous Drain (Id) (Tc)76 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)285 nC
Input Capacitance (Ciss) (Max)12385 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3
Power Dissipation (Max)543 W
Rds On (Max)36 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

    FCH76N60N | ON Semiconductor | Zenode.ai