Description
General part information
ISC019N03L5SATMA1
With the combined portfolio of Infineon's OptiMOS™ and StrongIRFET™ power MOSFET families, Infineon offers the right choice for all different customers and their requirements. Especially for customers who are looking for asimple and price competitive solution, but still want to enjoy a stable supply at the well-established Infineon quality, we offer the right products. The products can address a broad range of applications such as SMPS (adapterandcharger),battery powered applications,motor control and drives,battery management systems, inverters,computingandmobile applications. The actual portfolio focus on 30V n-channel MOSFETs and products for smaller power handling (n- & p-channel) in a wide range of packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC019N03L5SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 28 A |
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 44 nC, 44 nC |
| Input Capacitance (Ciss) (Max) | 2800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-5 |
| Power Dissipation (Max) | 2.5 W, 69 W |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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