VS-4C10ET07T-M3
ActiveVishay General Semiconductor - Diodes Division
RECTIFIER, SILICON CARBIDE, 650V
VS-4C10ET07T-M3
ActiveVishay General Semiconductor - Diodes Division
RECTIFIER, SILICON CARBIDE, 650V
Description
General part information
VS-4C10ET07T-M3
RECTIFIER, SILICON CARBIDE, 650V
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-4C10ET07T-M3 |
|---|---|
| Capacitance | 440 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 80 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220AC |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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