Specification	E4M0060075J2-TR

Current - Continuous Drain (Id) (Tc)	36 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1205 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	131 W
Qualification	AEC-Q101
Rds On (Max)	78 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	19 V
Vgs(th) (Max)	3.8 V

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