Specification	TW048U65C,RQ

Current - Continuous Drain (Id) (Tc)	39 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1362 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerSFN
Package Name	Toll
Power Dissipation (Max)	132 W
Rds On (Max)	71 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5 V

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