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GT2K6P15M

GT2K6P15M

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Goford Semiconductor

MOSFET P-CH -150V 11A TO-263-3

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GT2K6P15M

GT2K6P15M

Active
Goford Semiconductor

MOSFET P-CH -150V 11A TO-263-3

Find alt

Description

General part information

GT2K6P15M

MOSFET P-CH -150V 11A TO-263-3

Technical Specifications

Parameters and characteristics for this part

SpecificationGT2K6P15M
Current - Continuous Drain (Id) (Tc)11 A
Drain to Source Voltage (Vdss)150 V, -150 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)28 nC
Input Capacitance (Ciss) (Max)1400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263
Power Dissipation (Max)58 W
Rds On (Max)260 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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