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Package Image for U-DFN2020-6

DMN2025UFDF-7

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Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for U-DFN2020-6

DMN2025UFDF-7

Active
Diodes Inc

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN2025UFDF Series

20V N-Channel Enhancement Mode MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2025UFDF-7
Current - Continuous Drain (Id) (Ta)6.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)12.3 nC
Input Capacitance (Ciss) (Max)486 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package NameU-DFN2020-6 (Type F)
Power Dissipation (Max)700 mW
Rds On (Max)25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part