
DMN2025UFDF-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2025UFDF-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN2025UFDF Series
20V N-Channel Enhancement Mode MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2025UFDF-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12.3 nC |
| Input Capacitance (Ciss) (Max) | 486 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | U-DFN2020-6 (Type F) |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources