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W66AP6NBQAFJ

W66AP6NBQAFJ

NRND
Winbond Electronics

IC DRAM 1GBIT LVSTL 200TFBGA

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W66AP6NBQAFJ

W66AP6NBQAFJ

NRND
Winbond Electronics

IC DRAM 1GBIT LVSTL 200TFBGA

Find alt

Description

General part information

W66AP6NBQAFJ

IC DRAM 1GBIT LVSTL 200TFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationW66AP6NBQAFJ
Access Time3.6 ns
Clock Frequency1.6 GHz
Memory Depth64 M
Memory FormatDRAM
Memory Interface (Type)LVSTL_11
Memory Size1 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case200-TFBGA
Package Length10 mm
Package Name200-TFBGA
Package Width14.5 mm
TechnologySDRAM - Mobile LPDDR4
Voltage - Supply (Range 1 Maximum)1.17 V
Voltage - Supply (Range 1 Minimum)1.06 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

Pricing

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CAD

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