BZD27B5V6P-M3-18
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 800MW DO219AB
BZD27B5V6P-M3-18
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 800MW DO219AB
Description
General part information
BZD27B5V6P-M3-18
DIODE ZENER 5.6V 800MW DO219AB
Technical Specifications
Parameters and characteristics for this part
| Specification | BZD27B5V6P-M3-18 |
|---|---|
| Current - Reverse Leakage | 10 µA |
| Impedance (Max) (Zzt) | 4 Ohms |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | DO-219AB |
| Package Name | DO-219AB (SMF) |
| Power - Max | 800 mW |
| Voltage - Forward (Vf) (Max) | 1.2 V |
| Voltage - Zener (Nom) (Vz) | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources