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Description

General part information

GSFL1003

MOSFET, P-CH, SINGLE, -2A, -100V

Technical Specifications

Parameters and characteristics for this part

SpecificationGSFL1003
Current - Continuous Drain (Id) (Ta)2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)30 nC
Input Capacitance (Ciss) (Max)2000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power Dissipation (Max)1.78 W
Rds On (Max)200 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

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CAD

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Documents

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