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BC817-40WT1G

BC817-40WT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 500 MA, 460 MW, SC-70, SURFACE MOUNT

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BC817-40WT1G

BC817-40WT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 500 MA, 460 MW, SC-70, SURFACE MOUNT

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Description

General part information

BC817-40WT1G

AEC-Q101 Qualified and Consult Factory for PPAP Capable

This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant

Technical Specifications

Parameters and characteristics for this part

SpecificationBC817-40WT1G
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)250
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-70, SOT-323
Package NameSC-70-3 (SOT323)
Power - Max460 mW
Transistor TypeNPN
Vce Saturation (Max)700 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

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CAD

3D models and CAD resources for this part