
AFGBP40T120SWD
ActiveON Semiconductor
FS7 1200V 40A NSCR IGBT BPAK

AFGBP40T120SWD
ActiveON Semiconductor
FS7 1200V 40A NSCR IGBT BPAK
Description
General part information
AFGBP40T120SWD
FS7 1200V 40A NSCR IGBT BPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | AFGBP40T120SWD |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 155 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, T2PAK |
| Power - Max | 681 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 330 ns |
| Switching Energy (Off) | 3 mJ |
| Switching Energy (On) | 5.34 mJ |
| Td (off) @ 25°C | 258 ns |
| Td (on) @ 25°C | 48 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 800 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Pricing
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CAD
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