
BSDD06G65E2
ActiveBourns Inc.
DIODE SIL CARBIDE 650V 6A TO252

BSDD06G65E2
ActiveBourns Inc.
DIODE SIL CARBIDE 650V 6A TO252
Description
General part information
BSDD06G65E2
DIODE SIL CARBIDE 650V 6A TO252
Technical Specifications
Parameters and characteristics for this part
| Specification | BSDD06G65E2 |
|---|---|
| Capacitance | 201 pF |
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage | 30 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V, 1.7 V |
Pricing
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CAD
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Documents
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