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BSDD06G65E2

BSDD06G65E2

Active
Bourns Inc.

DIODE SIL CARBIDE 650V 6A TO252

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BSDD06G65E2

BSDD06G65E2

Active
Bourns Inc.

DIODE SIL CARBIDE 650V 6A TO252

Find alt

Description

General part information

BSDD06G65E2

DIODE SIL CARBIDE 650V 6A TO252

Technical Specifications

Parameters and characteristics for this part

SpecificationBSDD06G65E2
Capacitance201 pF
Current - Average Rectified (Io)6 A
Current - Reverse Leakage30 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.7 V, 1.7 V

Pricing

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CAD

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Documents

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