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Description

General part information

TT8K11TCR

MOSFET 2N-CH 30V 3A 8TSST

Technical Specifications

Parameters and characteristics for this part

SpecificationTT8K11TCR
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)3 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
FET Feature Drive Voltage4 V
Gate Charge (Max)2.5 nC
Input Capacitance (Ciss) (Max)140 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseFlat Leads, 8-SMD
Package Name8-TSST
Power - Max1 VA
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.5 V

Pricing

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