Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
General part information
N-Channel 60 V 60A (Tc) 3.25W (Ta), 100W (Tc) Through Hole TO-220AB
Technical documentation and resources
Parameters and characteristics commom to parts in this series
| Specification | SUP60N06-12P-E3 | SUP60 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A | 60 A |
| Drain to Source Voltage (Vdss) | 60 V | 20 - 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC | 50 - 55 nC |
| Gate Charge (Qg) (Max) @ Vgs | - | 75 - 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF | 1970 - 5950 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 - 175 ░C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power Dissipation (Max) | 3.25 W, 100 W | 3.25 - 150 W |
| Rds On (Max) @ Id, Vgs | - | 4.5 - 18.3 mOhm |
| Rds On (Max) @ Id, Vgs [Max] | 12 mOhm | 12 mOhm |
| Supplier Device Package | TO-220AB | TO-220AB |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V | 3 - 4.5 V |
MOSFET N-CH 100V 60A TO220AB
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUP60N10-18P-E3 | TO-220AB | 4.5 V | MOSFET (Metal Oxide) | 8 V, 10 V | 18.3 mOhm | Through Hole | -55 °C | 175 ░C | N-Channel | 100 V | 2600 pF | 3.75 W, 150 W | 60 A | 20 V | TO-220-3 | 75 nC | ||
Vishay Siliconix SUP60N02-4M5P-E3 | TO-220AB | 3 V | MOSFET (Metal Oxide) | 4.5 V, 10 V | 4.5 mOhm | Through Hole | -55 °C | 175 ░C | N-Channel | 20 V | 5950 pF | 3.75 W, 120 W | 60 A | 20 V | TO-220-3 | 50 nC | ||
Vishay Siliconix SUP60N06-12P-E3 | TO-220AB | 4.5 V | MOSFET (Metal Oxide) | 10 V | Through Hole | -55 °C | 150 °C | N-Channel | 60 V | 1970 pF | 3.25 W, 100 W | 60 A | 20 V | TO-220-3 | 55 nC | 12 mOhm | ||
Vishay Siliconix SUP60N06-12P-GE3 | TO-220AB | 4.5 V | MOSFET (Metal Oxide) | 10 V | Through Hole | -55 °C | 150 °C | N-Channel | 60 V | 1970 pF | 3.25 W, 100 W | 60 A | 20 V | TO-220-3 | 55 nC | 12 mOhm | ||
Vishay Siliconix SUP60N10-16L-E3 | TO-220AB | 3 V | MOSFET (Metal Oxide) | 4.5 V, 10 V | 16 mOhm | Through Hole | -55 °C | 175 ░C | N-Channel | 100 V | 3820 pF | 150 W | 60 A | 20 V | TO-220-3 | 110 nC |
