FDMS2D4N03S
ObsoleteN-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET<SUP>TM</SUP> 30V, 163A, 1.8MΩ
FDMS2D4N03S
ObsoleteN-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET<SUP>TM</SUP> 30V, 163A, 1.8MΩ
Description
General part information
FDMS2D4N03S
The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS2D4N03S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 163 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 88 nC |
| Input Capacitance (Ciss) (Max) | 6540 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Flat Leads, 8-PowerSMD |
| Package Length | 5 mm |
| Package Name | Power56, 8-PQFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) | 1.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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