Specification	RBE030N04R0SZN6#HB0

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	56 nC
Input Capacitance (Ciss) (Max)	2690 pF, 2690 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerTDFN
Package Length	4.9 mm
Package Name	8-DFN
Package Width	5.75 mm
Power Dissipation (Max)	79 W
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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