Specification	IRF6629TR1PBF

Current - Continuous Drain (Id) (Ta)	29 A
Current - Continuous Drain (Id) (Tc)	180 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	4260 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	DirectFET™ Isometric MX
Package Name	DIRECTFET™ MX
Power Dissipation (Max)	100 W, 2.8 W
Rds On (Max)	2.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.35 V

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