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W949D2DBJX5E

W949D2DBJX5E

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Winbond Electronics

IC DRAM 512MBIT PAR 90VFBGA

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W949D2DBJX5E

W949D2DBJX5E

Active
Winbond Electronics

IC DRAM 512MBIT PAR 90VFBGA

Find alt

Description

General part information

W949D2DBJX5E

IC DRAM 512MBIT PAR 90VFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationW949D2DBJX5E
Access Time5 ns
Clock Frequency200 MHz
Memory Depth16 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size512 Mb
Memory TypeVolatile
Memory Width32 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-25 °C
Package / Case90-TFBGA
Package Length8 mm
Package Name90-VFBGA
Package Width13 mm
TechnologySDRAM - Mobile LPDDR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.7 V
Write Cycle Time - Page15 ns
Write Cycle Time - Word15 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    W949D2DBJX5E | Winbond Electronics | Zenode.ai