Specification	IRF6609TRPBF

Current - Continuous Drain (Id) (Ta)	31 A
Current - Continuous Drain (Id) (Tc)	150 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	69 nC
Input Capacitance (Ciss) (Max)	6290 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	DirectFET™ Isometric MT
Package Name	DIRECTFET™ MT
Power Dissipation (Max)	89 W, 1.8 W
Rds On (Max)	2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.45 V

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