Description
General part information
SPU01N60C3BKMA1
MOSFET N-CH 650V 800MA TO251-3
Technical Specifications
Parameters and characteristics for this part
| Specification | SPU01N60C3BKMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 800 mA |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5 nC, 5 nC |
| Input Capacitance (Ciss) (Max) | 100 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | PG-TO251-3-21 |
| Power Dissipation (Max) | 11 W |
| Rds On (Max) | 6 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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