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Description

General part information

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

SpecificationTK3A65DA(STA4,QM)
Current - Continuous Drain (Id) (Ta)2.5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)11 nC
Input Capacitance (Ciss) (Max)490 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)35 W
Rds On (Max)2.51 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.4 V

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