Description
General part information
1EDN7116GXTMA1
TheEiceDRIVER™1EDN7116G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as otherGaN SG HEMTsand SiMOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 2 A peak source and sink current, active Miller clamp, adjustable charge pump, and bootstrap voltage clamp. Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7116G to address even high-side applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 1EDN7116GXTMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 2 A |
| Current - Peak Output (Source) | 2 A |
| Driven Configuration | High-Side, Low-Side |
| Fall Time (Typ) | 3 ns |
| Gate Channel | N-Channel |
| Gate Type | MOSFET, GaN FET |
| High Side Voltage - Max (Bootstrap) | 200 V |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 10-VFDFN Exposed Pad |
| Package Name | PG-VSON-10-4 |
| Rise Time (Typ) | 3 ns |
| Voltage - Supply (Maximum) | 11 V |
| Voltage - Supply (Minimum) | 4.2 V |
Pricing
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