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IPB35N10S3L26ATMA2

IPB35N10S3L26ATMA2

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INFINEON

MOSFET_(75V 120V(

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IPB35N10S3L26ATMA2

IPB35N10S3L26ATMA2

Active
INFINEON

MOSFET_(75V 120V(

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Description

General part information

IPB35N10S3L26ATMA2

N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3-2

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB35N10S3L26ATMA2
Current - Continuous Drain (Id) (Tc)35 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)39 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3-2
Power Dissipation (Max)71 W
QualificationAEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

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Documents

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